| PART |
Description |
Maker |
| CM75TU-12F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM200DY-24NF |
Trench Gate Design Dual IGBTMOD
|
Powerex Power Semiconductors
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM75DU-12F |
Trench Gate Design Dual IGBTMOD 75 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CM300DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/600 Volts
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| CM400HU-24F |
Trench Gate Design Single IGBTMOD?/a> 400 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD 400 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD⑩ 400 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HU-24F |
Trench Gate Design Single IGBTMOD?/a> 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM150DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HU-12F |
Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| HDD60-48T512X HDD50-12D05P HDD50-12D05T HDD50-12D0 |
75W 960MHZ 26V NI780L 的DC - DC转换器的5060
3000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN DC - DC转换器的5060
1000000 SYSTEM GATE 1.2 VOLT FPGA DC - DC转换器的5060
DC-DC CONVERTER 50~60W DC - DC转换器的5060
XC2VP7-6FFG672C DC - DC转换器的5060
2000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 的DC - DC转换器的5060
DC-DC CONVERTER 50~60W 的DC - DC转换器的5060
6000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
4500 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:3.5W; C-E Breakdown Voltage:30V; DC Current Gain Min (hfe):300; Collector Current:400mA; Package/Case:TO-39
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| FT0018 FT0018-15 |
N-Channel Trench Gate MOSFET
|
Solid States Devices, Inc
Solid States Devices, I...
|
